Tracking the information about your manuscript
Communicate with the editorial office
Query manuscript payment status Editorial OfficeCollecting, editing, reviewing and other affairs offices
Managing manuscripts
Managing author information and external review Expert Information Peer ReviewOnline Review
Online Communication with the Editorial Department
Downloads
Page Views
Progress in the Analysis of Acidic and Metallic Pollutants in Airborne Molecular Contaminants(AMCs)
CAI Ling-xi;XU Jing-zao;PENG Zhen-lei;ZHANG Yu-hong;With the advancement of semiconductor manufacturing processes,airborne molecular contaminants( AMCs) have emerged as critical factors affecting chip yield and reliability. AMCs include acidic contaminants( MA),alkaline contaminants( MB),condensable compounds( MC),dopants( MD),and metallic contaminants( MM),among which acidic and metallic contaminants are particularly significant. Based on their primary sources and impact mechanisms of acidic and metallic contaminants,various sampling and pretreatment techniques have been developed,including impinger absorption,adsorbent tube sampling,liquid-phase extraction,vapor phase decomposition( VPD),container sampling,and online sampling. After sampling,advanced analytical techniques are employed for detection: acidic species are primarily analyzed using ion chromatography( IC),supplemented by methods such as chemiluminescence,ultraviolet fluorescence,ion mobility spectrometry( IMS),and cavity ringdown spectroscopy( CRDS). Metallic contaminants are mainly detected via inductively coupled plasma optical emission spectrometry and mass spectrometry( ICP-OES/ICP-MS),along with exploratory methods such as total reflection X-ray fluorescence spectroscopy( TXRF). To address current challenges in AMC detection,future research should focus on the development of high-sensitivity real-time monitoring,novel pretreatment strategies,and intelligent contamination source tracing system.These efforts aim to meet the increasingly stringent cleanliness requirements of advanced semiconductor process nodes and to support for the sustainable development of semiconductor manufacturing.
Advances in Analytical Techniques for Metal Contamination on Semiconductor Silicon Wafer Surfaces
CHANG Yan;SHI Ze-yuan;HAO Ping;GAO Yi-ming;WANG Yong;LI Geng-yin;LI Chun-hua;Shanghai Institute of Metrology and Testing Technology;China Electronics Standardization Institute;As semiconductor technology advances toward the 5 nm node and beyond,metal contamination on silicon wafer surfaces has become a critical factor limiting chip performance and yield.This paper systematically reviewed recent advances in analytical techniques and application strategies for metal impurities on silicon wafer surfaces. It begins with an introduction to the fundamental characteristics of metal contamination,its impact on device performance,and the primary analytical standard systems.The paper focused on describing the principles,features,and application scoped of major techniques,including vapor phase decomposition-inductively coupled plasma mass spectrometry,total reflection X-ray fluorescence,secondary ion mass spectrometry,time-of-flight secondary ion mass spectrometry,auger electron spectroscopy,and X-ray photoelectron spectroscopy.The performance of these techniques was systematically compared in terms of detection limits,spatial resolution,elemental coverage,and chemical state characterization. Based on these insights,a decision-making framework for selecting appropriate analytical methods was proposed,considering contamination characteristics,analytical objectives,and resource conditions.Optimization strategies for integrated,multi-technique analysis systems were presented,along with tailored technical solutions for specific scenarios such as process monitoring,failure analysis,and research and development optimization. Looking ahead,analytical techniques were expected to evolve toward higher sensitivity,better spatial resolution,and improved real-time monitoring capabilities,providing stronger technical support for contamination control in advanced process nodes.
Current Status and Prospects of Standardization of Electronic Grade Chemicals
QUAN Can;Electronic chemicals are core supporting materials for the electronics industry,including semiconductors,display panels,and photovoltaics,and are often referred to as the “growth hormone”of the chip industry. They are widely used in key manufacturing processes such as wafer cleaning,etching,photolithography,and deposition.These critical materials,including ultrapure reagents,photoresist solvents,and specialty gases,directly affect chip performance due to their purity and impurity levels.China places great emphasis on the domestic production of electronic chemicals,with standardization serving as a key technological foundation for the independent development of the semiconductor industry.This study presented a systematic analysis of the applications and market landscape of electronic chemicals,such as polysilicon and flexible electronic materials used in smartphones,in chip manufacturing.It examined the standardization frameworks of representative electronic-grade solvents,acids,alkalis,and specialty gases established by the International Semiconductor Industry Association( SEMI),alongside relevant policies and standardization developments in China. The research also summarized key achievements in the development of certified reference materials and metrological traceability for high-purity solvents and trace impurities. These included a series of high-purity solvent reference materials,high-purity silicon reference materials,and ultra-high-purity helium gas standards,all of which provided essential technical support for building a self-sufficient semiconductor material supply chain. The findings offer valuable insights for accelerating the localization of electronic chemicals,ensuring the security of China's semiconductor industry,and supporting the national high-quality development strategy. In particular,this work provided a systematic framework for addressing challenges related to the “production processes-product standards-metrological traceability”for high-end electronic chemicals.
Research Progress on Analysis Technology of Metal Impurities in Electronic Chemical Precursor Materials
LI Geng-yin;SHI Ze-yuan;LI Chun-hua;XU Jian-guang;ZHANG Xing-yu;WANG Jun;CHANG Yan;Shanghai Institute of Metrology and Testing Technology;As semiconductor manufacturing processes advance to the nanometer level,the control of metal impurities in precursor materials has become a critical factor affecting device performance and yield. This article first outlined on the definition,classification,and current status of the standard system of electronic chemical precursors. It then systematically reviewed sample pretreatment techniques for solid,liquid,and gaseous precursors. In view of the unique properties and analytical requirements of different precursors forms,the principles,applicable conditions,and technical key points of various methods including wet digestion with electric heating plates,microwave digestion,ashing,thermal volatilization-acid dissolution,acid mist digestion,graphite fumigation,direct acid digestion,vacuum distillation,solution absorption and gas absorption-hydrolysis mixing were discussed in depth.The article further discussed the challenges in inductively coupled plasma mass spectrometry( ICP-MS) for precursor analysis,including spectral interference and matrix effect,and presents solutions such as high-resolution mass spectrometry and reaction/collision cell technology.In terms of analytical method validation and quality assurance,challenges such as the lack of standard reference materials for precursor materials,complex and variable matrices,and extremely low detection requirements were addressed by proposing a comprehensive strategy combining Measurement System Analysis( MSA) and traditional validation methods.By systematically evaluating repeatability,reproducibility,and key variation factors,the reliability of the method was ensured. As semiconductor nodes move into the 5 nm and sub-5 nm era,the analysis of metal impurities in precursor materials was expected to evolve towards integrated pretreatment and analytical technologies,artificial intelligence applications,and real-time online monitoring. Strengthening the research and development of method standards and reference materials and establishing a complete quality control system are of great significance for supporting the development of the electronic chemical precursor materials industry.
Journal Information
Journal Name: Chemical Reagents
First Published: April 1979 • Monthly
Governed by: China Petroleum and Chemical Industry Federation
Sponsored by:
China Association for Analysis and Testing
Sinopharm Chemical Reagents Co., Ltd.
Beijing Guohua Jingshi Consulting Co., Ltd.
Edited and Published by: Editorial Office of Chemical Reagents
Editor-in-Chief: HE Hui
Phone: 010-58321793
010-58321723
E-mail: webmaster@chinareagent.com.cn
Address: Room 107, Building 6, No. 8 Tai Ping Street, Xicheng District, Beijing, 100050, China
Serial Publication Number: ISSN 0258-3283 CN 11-2135/TQ
Domestic Subscription:
Available at all post offices nationwide, Mail Subscription Code: 2-444
Price: CNY 40 per issue
Advertisement Registration number: 京西工商广登字20170008